发明授权
US6087271A Methods for removal of an anti-reflective coating following a resist
protect etching process
失效
在抗蚀剂保护蚀刻工艺之后去除抗反射涂层的方法
- 专利标题： Methods for removal of an anti-reflective coating following a resist protect etching process
- 专利标题（中）： 在抗蚀剂保护蚀刻工艺之后去除抗反射涂层的方法
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申请号： US993869申请日： 1997-12-18
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公开(公告)号： US6087271A公开(公告)日： 2000-07-11
- 发明人: William G. En , Minh Van Ngo , Olov B. Karlsson , Christopher F. Lyons , Maria Chow Chan
- 申请人： William G. En , Minh Van Ngo , Olov B. Karlsson , Christopher F. Lyons , Maria Chow Chan
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/311 ; H01L21/336 ; H01L21/283
摘要：
A method is provided for removing an bottom anti-reflective coating (BARC) from a transistor gate following at least one etch back process associated with a spacer formation and/or subsequent resistor protect etching process or processes. The method eliminates the need to use HF acid in the stripping process by substantially reducing the thickness of the BARC during each of the etching back processes, such that, only a thin layer of BARC material remains that can be easily removed with phosphoric acid.
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