Invention Grant
US6090300A Ion-implantation assisted wet chemical etching of III-V nitrides and
alloys
失效
III-V氮化物和合金的离子注入辅助湿化学蚀刻
- Patent Title: Ion-implantation assisted wet chemical etching of III-V nitrides and alloys
- Patent Title (中): III-V氮化物和合金的离子注入辅助湿化学蚀刻
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Application No.: US84223Application Date: 1998-05-26
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Publication No.: US6090300APublication Date: 2000-07-18
- Inventor: Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
- Applicant: Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
- Applicant Address: CT Stamford
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: CT Stamford
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01S5/20 ; H01S5/323 ; H01L21/3115 ; B44C1/22
Abstract:
A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
Public/Granted literature
- US4761317A Abrasion resistant adherend Public/Granted day:1988-08-02
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