公开(公告)号：US08522525B2

公开(公告)日：2013-09-03

申请号：US11719944

申请日：2005-11-12

Applicant: Werner Goetz ,  Oliver Schmidt

Inventor： Werner Goetz ,  Oliver Schmidt

IPC: F04D31/00 ,  F02C7/12 ,  F02C1/00 ,  F02K99/00

CPC classification number: F02C7/16 ,  F05D2260/205 ,  F05D2260/232 ,  F05D2260/60 ,  Y02T50/675

Abstract: A device and method for drawing off and recirculating cooling streams, specifically for drawing off and recirculating a cooling stream of fuel for cooling at least one aircraft engine accessory, is disclosed. The device having a tubular jacket part defining a flow cross-section through which a primary stream, specifically a fuel stream, flows by way of an extraction pipe which is positioned approximately in the center of the flow cross-section, or jacket part, in order to draw off a cooling stream from the primary stream, by way of a hollow strut extending in the radial direction to divert this cooling stream from the device with the aid of the extraction pipe and to supply it to at least one accessory to be cooled, and by way of a return opening to recirculate the cooling stream directed through the accessory for cooling purposes to the primary stream.

Abstract translation: 公开了一种用于抽出和循环冷却流的装置和方法，特别是用于抽出和再循环用于冷却至少一个飞机发动机附件的燃料的冷却流。 该装置具有限定流动截面的管状套管部分，主流体，特别是燃料流通过该流动横截面大致位于流动横截面的中心或抽出部分中的抽吸管流动， 通过在径向方向上延伸的中空支柱从主流中排出冷却流，借助于抽出管将该冷却流从装置中转移出来，并将其提供给至少一个待冷却的附件 并且通过返回开口将引导通过附件的冷却流再循环以用于冷却目的到主流。

公开(公告)号：US20070145384A1

公开(公告)日：2007-06-28

申请号：US11682276

申请日：2007-03-05

Applicant: Nathan Gardner ,  Gangyi Chen ,  Werner Goetz ,  Michael Krames ,  Gerd Mueller ,  Yu-Chen Shen ,  Satoshi Watanabe

Inventor： Nathan Gardner ,  Gangyi Chen ,  Werner Goetz ,  Michael Krames ,  Gerd Mueller ,  Yu-Chen Shen ,  Satoshi Watanabe

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/325

Abstract: In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.

Abstract translation: 在器件中，III族氮化物发光层设置在n型区域和p型区域之间。 设置在n型区域和发光层之间的第一间隔层被掺杂到掺杂剂浓度为6×10 18 cm -3和5×10 6 19厘米-3 -3。 设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到掺杂剂浓度小于6×10 -3 -3 -3倍 >。

公开(公告)号：US20050167693A1

公开(公告)日：2005-08-04

申请号：US11095854

申请日：2005-03-30

Applicant: Werner Goetz ,  Michael Camras ,  Changhua Chen ,  Xiaoping Chen ,  Gina Christenson ,  R. Kern ,  Chihping Kuo ,  Paul Martin ,  Daniel Steigerwald

Inventor： Werner Goetz ,  Michael Camras ,  Changhua Chen ,  Xiaoping Chen ,  Gina Christenson ,  R. Kern ,  Chihping Kuo ,  Paul Martin ,  Daniel Steigerwald

IPC: H01S5/30 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01L21/00 ,  H01L33/00

CPC classification number: H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2924/00

Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

Abstract translation: GaN基发光器件的P型层优化用于形成与金属的欧姆接触。 在第一实施例中，在p型导电层和金属接触之间形成电阻率大于或等于约7Ωcm的p型GaN过渡层。 在第二实施例中，p型过渡层是任何III-V半导体。 在第三实施例中，p型过渡层是超晶格。 在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

公开(公告)号：US06630692B2

公开(公告)日：2003-10-07

申请号：US09870330

申请日：2001-05-29

Applicant: Werner Goetz ,  Nathan Fredrick Gardner ,  Richard Scott Kern ,  Andrew Youngkyu Kim ,  Anneli Munkholm ,  Stephen A. Stockman ,  Christopher P. Kocot ,  Richard P. Schneider, Jr.

Inventor： Werner Goetz ,  Nathan Fredrick Gardner ,  Richard Scott Kern ,  Andrew Youngkyu Kim ,  Anneli Munkholm ,  Stephen A. Stockman ,  Christopher P. Kocot ,  Richard P. Schneider, Jr.

IPC: H01L3300

CPC classification number: H01L33/32 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

Abstract: III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.

Abstract translation: 提供了具有改进性能的III-氮化物发光二极管。 在一个实施例中，发光器件包括衬底，设置在衬底上的成核层，设置在成核层上方的缺陷减少结构，以及设置在缺陷还原结构之上的n型III-氮化物半导体层。 n型层例如具有大于约1微米的厚度和大于或等于约10厘米-3的硅掺杂剂浓度。 在另一个实施例中，发光器件包括III-氮化物半导体有源区，其包括均匀地掺杂有杂质或掺杂有在基本上垂直于有源区的方向上分级的浓度的杂质的至少一个势垒层。

公开(公告)号：US09634181B2

公开(公告)日：2017-04-25

申请号：US13877549

申请日：2011-10-26

Applicant: Nathan Frederick Gardner ,  Melvin Barker McLaurin ,  Michael Jason Grundmann ,  Werner Goetz ,  John Edward Epler ,  Qi Ye

Inventor： Nathan Frederick Gardner ,  Melvin Barker McLaurin ,  Michael Jason Grundmann ,  Werner Goetz ,  John Edward Epler ,  Qi Ye

IPC: H01L21/00 ,  H01L33/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  C30B33/06

CPC classification number: H01L33/0075 ,  C30B23/025 ,  C30B25/183 ,  C30B29/403 ,  C30B33/06 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate−a layer|)/asubstrate]*100% is no more than 1%.

公开(公告)号：US20130244364A1

公开(公告)日：2013-09-19

申请号：US13877549

申请日：2011-10-26

Applicant: Nathan Frederick Gardner ,  Melvin Barker McLaurin ,  Michael Jason Grundmann ,  Werner Goetz ,  John Edward Epler ,  Qi Ye

Inventor： Nathan Frederick Gardner ,  Melvin Barker McLaurin ,  Michael Jason Grundmann ,  Werner Goetz ,  John Edward Epler ,  Qi Ye

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  C30B23/025 ,  C30B25/183 ,  C30B29/403 ,  C30B33/06 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate−a layer|)/asubstrate]*100% is no more than 1%.

Abstract translation: 在根据本发明的实施方案的方法中，在生长衬底上生长III族氮化物层。 III族氮化物层连接到主体衬底。 除去生长底物。 生长衬底是非III族氮化物材料。 生长衬底具有衬底的面内晶格常数。 III族氮化物层的层状晶格常数。 在一些实施方案中，[（| a底物 - 层|）/底物] * 100％不超过1％。

公开(公告)号：US20050236641A1

公开(公告)日：2005-10-27

申请号：US10830202

申请日：2004-04-21

Applicant: Werner Goetz ,  Michael Krames ,  Anneli Munkholm

Inventor： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

IPC: H01L33/08 ,  H01L33/32 ,  H01L29/22

CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/12

Abstract: In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

Abstract translation: 在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。 在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。 在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。 例如，该比率可以在约1至约1.01之间。

公开(公告)号：US20060011937A1

公开(公告)日：2006-01-19

申请号：US11227814

申请日：2005-09-14

Applicant: Werner Goetz ,  Michael Krames ,  Anneli Munkholm

Inventor： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20

Abstract: In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

公开(公告)号：US20050263780A1

公开(公告)日：2005-12-01

申请号：US11177670

申请日：2005-07-07

Applicant: David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

Inventor： David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

公开(公告)号：US3948008A

公开(公告)日：1976-04-06

申请号：US481385

申请日：1974-06-20

Applicant: Werner Goetz

Inventor： Werner Goetz

IPC: E04B1/00 ,  E04B5/02 ,  E04B1/34 ,  E04B1/04

CPC classification number: E04B1/003 ,  E04B5/04

Abstract: The present prefabricated structural element is especially adapted for the formation of balconies or other cantilevered structures. To this end a floor slab section or main section is joined to a balcony or cantilevered section by reinforcing steel elements which are connected to or in both sections and which bridge a gap between the sections. The gap width between the sections is preferably narrower than the top width of a supporting member, such as a wall or header, so that the gap may be filled with poured-in-place concrete once the element is properly placed in the desired position on top of the header or other supporting structure.

Abstract translation: 现有的预制结构元件特别适用于形成阳台或其他悬臂结构。 为此，通过加强连接到两个部分中或两个部分中的钢元件并且桥接两个部分之间的间隙，将楼板部分或主体部分连接到阳台或悬臂部分。 部分之间的间隙宽度优选地比支撑构件（例如壁或集管）的顶部宽度窄，使得当将元件适当地放置在期望位置上时，间隙可以填充浇注混凝土 头部或其他支撑结构的顶部。