发明授权
US6090638A Process for manufacturing high-sensitivity capacitive and resonant
integrated sensors, particularly accelerometers and gyroscopes, and
sensors made therefrom
失效
用于制造高灵敏度电容和谐振集成传感器,特别是加速度计和陀螺仪以及由其制造的传感器的方法
- 专利标题: Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom
- 专利标题(中): 用于制造高灵敏度电容和谐振集成传感器,特别是加速度计和陀螺仪以及由其制造的传感器的方法
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申请号: US113979申请日: 1998-07-10
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公开(公告)号: US6090638A公开(公告)日: 2000-07-18
- 发明人: Benedetto Vigna , Paolo Ferrari , Marco Ferrera , Pietro Montanini
- 申请人: Benedetto Vigna , Paolo Ferrari , Marco Ferrera , Pietro Montanini
- 申请人地址: ITX Agrate Brianza
- 专利权人: STMicroelectronics S.r.l.
- 当前专利权人: STMicroelectronics S.r.l.
- 当前专利权人地址: ITX Agrate Brianza
- 优先权: EPX97830345 19970710
- 主分类号: B81B3/00
- IPC分类号: B81B3/00 ; G01C19/56 ; G01P15/00 ; G01P15/08 ; G01P15/125 ; H01L21/762 ; H01L21/764 ; H01L29/84 ; H02L23/48
摘要:
A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.
公开/授权文献
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