发明授权
US6093281A Baffle plate design for decreasing conductance lost during precipitation
of polymer precursors in plasma etching chambers
失效
挡板设计，用于降低等离子体蚀刻室中聚合物前体沉淀过程中的电导损失
- 专利标题： Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers
- 专利标题（中）： 挡板设计，用于降低等离子体蚀刻室中聚合物前体沉淀过程中的电导损失
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申请号： US31232申请日： 1998-02-26
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公开(公告)号： US6093281A公开(公告)日： 2000-07-25
- 发明人: Richard S. Wise , David M. Dobuzinsky , William C. Wille
- 申请人： Richard S. Wise , David M. Dobuzinsky , William C. Wille
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corp.
- 当前专利权人： International Business Machines Corp.
- 当前专利权人地址： NY Armonk
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; H01J37/32 ; C23C16/00
摘要：
A baffle plate for semiconductor processing apparatus. The baffle plate includes a plurality of slits. A plurality of fins are located between adjacent slits. The fins have varying heights and a supporting portion interconnects the fins.
公开/授权文献
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