发明授权
US06093607A Method of forming sharp beak of poly by oxygen/fluorine implant to
improve erase speed for split-gate flash
失效
通过氧/氟注入形成多晶尖锐喙的方法,以提高分流闸闪存的擦除速度
- 专利标题: Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash
- 专利标题(中): 通过氧/氟注入形成多晶尖锐喙的方法,以提高分流闸闪存的擦除速度
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申请号: US4806申请日: 1998-01-09
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公开(公告)号: US06093607A公开(公告)日: 2000-07-25
- 发明人: Chia-Ta Hsieh , Yai-Fen Lin , Hong-Cheng Sung , Di-Son Kuo
- 申请人: Chia-Ta Hsieh , Yai-Fen Lin , Hong-Cheng Sung , Di-Son Kuo
- 申请人地址: TWX Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company
- 当前专利权人: Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址: TWX Hsin-Chu
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L29/423 ; H01L21/8247
摘要:
A method is provided for forming a short and sharp gate bird's beak in order to increase the erase speed of a split-gate flash memory. This is accomplished in two embodiments where in the first, fluorine is implanted in the first polysilicon layer to form the floating gate. It is disclosed here that the implanting of fluorine increases the oxidation rate of the polysilicon and because of the faster oxidation, the polygate bird's beak (GBB) that is formed attains a relatively short and sharp shape in comparison with conventional beaks. This has the attendant benefit of forming a relatively small memory cell, and the concomitant increase in the erase speed of the cell. In the second embodiment, oxygen is used with the same favorable results. A third embodiment discloses the structure of a split-gate flash memory cell having a sharp bird's beak.
公开/授权文献
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