发明授权
- 专利标题： Self-aligned silicide contacts formed from deposited silicon
- 专利标题（中）： 由沉积硅形成的自对准硅化物触点
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申请号： US992573申请日： 1997-12-17
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公开(公告)号： US6093967A公开(公告)日： 2000-07-25
- 发明人: Yowjuang W. Liu , Mark S. Chang , Michael K. Templeton
- 申请人： Yowjuang W. Liu , Mark S. Chang , Michael K. Templeton
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L23/54 ; H01L21/441
摘要：
Self-aligned silicide contacts having a height that is at least about equal to the gate height are formed by depositing silicon over active regions of the substrate, depositing a refractory metal over the silicon, and heating the silicon and the refractory metal. The deposited silicon may be amorphous silicon in which case the deposition temperature can be as low as 580.degree. C. If polysilicon is deposited, the deposition temperature has to be at least 620.degree. C.