Invention Grant
- Patent Title: Radio frequency switch circuit having resistors connected to back gates of transistors
- Patent Title (中): 射频开关电路具有连接到晶体管的背栅的电阻
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Application No.: US30777Application Date: 1998-02-26
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Publication No.: US6094088APublication Date: 2000-07-25
- Inventor: Hitoshi Yano
- Applicant: Hitoshi Yano
- Applicant Address: JPX Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX9-041275 19970226
- Main IPC: H01P1/15
- IPC: H01P1/15 ; H03K17/687 ; H03K17/693 ; H04B1/18 ; H04B1/44 ; H03K3/01
Abstract:
In a switch circuit, at least one transistor has a source, a drain, a gate for receiving a control voltage and a back gate. At least one resistor is connected between the back gate of the transistor and a ground terminal.
Public/Granted literature
- USD366104S Bath tub board Public/Granted day:1996-01-09
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