A technique for fabricating a phase shift mask with multiple phase shifts by using self-aligned spacers to form phase shifting regions on a surface of a mask substrate. Three phase shifting regions are formed corresponding to 180.degree./120.degree./60.degree. phase shifts or delays on the surface of mask substrate. The three phase shifting regions are fabricated from three different dielectric materials, each having a different refractive indices. The first phase shifting region is formed by a photolithography technique, but the other two phase shifting regions are formed by the formation of self-aligned spacers. In an alternative technique, all three of the phase shifting regions are formed by the use of self-aligned spacers.