An electron beam direct drawing method has the steps of: converting drawing data for the electron beam direct drawing of a semiconductor device pattern on a chip into a predetermined size and shape; dividing the converted drawing data into multiple fields which are electron beam deflection regions; drawing the drawing data corresponding to each of the divided multiple fields on the chip by step and repeat method; wherein the converted drawing data dividing step is conducted such that the drawing data is divided into the multiple fields on the basis of the chip. Also disclosed is an electron beam direct drawing system which has: a memory which stores drawing data, which is converted into a predetermined size and shape for the electron beam direct drawing of a semiconductor device pattern on a chip; a main body to expose an electron beam on the chip according to the drawing data; a recording medium; and a drawing control section which reads out the drawing data stored in the memory according to a program recorded in the recording medium, divides the drawing data into multiple fields which are electron beam deflection regions, and draws the drawing data corresponding to each of the divided multiple fields on the chip by step and repeat method while exposing an electron beam by the main body; wherein the drawing control section determines the size of the chip and divides the read-out drawing data into multiple fields on the basis of the chip.