发明授权
- 专利标题: Magnetoresistive element
- 专利标题(中): 磁阻元件
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申请号: US147845申请日: 1999-03-18
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公开(公告)号: US6104275A公开(公告)日: 2000-08-15
- 发明人: Atsushi Maeda
- 申请人: Atsushi Maeda
- 申请人地址: JPX Osaka
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX6-249437 19960920
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; G11B5/39 ; H01F10/32 ; H01L43/08 ; H01L43/06
摘要:
A magnetoresistive element is obtained which can exhibit a larger MR change than conventional.The magnetoresistive element is characterized as comprising a multilayer film 3 having a multilayer structure in which a nonmagnetic conductive layer 5 is interposed between a pair of ferromagnetic layer 4, 6, a pair of electrodes 7, 8 which produces a detection current flow through the multilayer film 3, and filter layers 1, 2 comprised of ferromagnetic material and disposed between at least one of the pair of ferromagnetic layers and the electrodes 7, 8 for delivering spin-polarized electrons to the ferromagnetic layers 4, 6, and characterized that a traveling distance of electrons in the ferromagnetic layers 4, 6 is maintained shorter than a spin diffusion length.
公开/授权文献
- US5387818A Downhill effect rotational apparatus and methods 公开/授权日:1995-02-07
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