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发明授权
US6110347A Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate 有权
通过电沉积法或无电沉积法形成氧化铟膜的方法，设置有用于半导体元件的氧化铟膜的衬底以及设置有衬底的半导体元件

Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate
摘要：
A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film-forming method are further provided.
摘要（中）：

一种通过将基板和对电极浸入至少含有硝酸盐和铟离子的水溶液中并在基板和couter电极之间流动电流从而在导电基板上形成氧化铟膜的方法，从而使氧化铟膜 提供了衬底上的形成。 还提供了一种用于半导体元件的基板和使用该膜形成方法制造的光电元件。 还公开了通过无电沉积方法形成氧化铟膜的水溶液，其至少含有硝酸盐和铟离子和酒石酸盐。 还提供了一种通过使用该水溶液的无电沉积工艺在衬底上形成氧化铟膜的膜形成方法，以及使用该膜形成方法制造的半导体元件用基板和光电元件。

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