A fuse repair circuit for a semiconductor memory device includes a cell array provided with a row redundancy and a column redundancy and a fuse block for driving the row redundancy during a RAS cycle and driving the column redundancy during a CAS cycle, wherein the fuse block consists of an address input unit for selectively outputting a row address or a column address in accordance with switching signals, a plurality of fuse units, wherein redundancy information of a defective cell is programmed, for comparing an inputted address with the programmed redundancy information, and a redundancy driving unit for outputting a matching signal for driving the row redundancy or the column redundancy when the inputted address and the programmed redundancy information are identical.