发明授权
- 专利标题: Synchronous DRAM memory with asynchronous column decode
- 专利标题(中): 具有异步列解码的同步DRAM存储器
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申请号: US315649申请日: 1999-05-20
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公开(公告)号: US6111814A公开(公告)日: 2000-08-29
- 发明人: Scott Schaefer
- 申请人: Scott Schaefer
- 申请人地址: ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: ID Boise
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G11C8/00 ; G11C8/06 ; G11C11/408
摘要:
Disclosed is a synchronous DRAM memory module with control circuitry that allows the memory module to operate partially asynchronously. Specifically, a circuit is disclosed which utilizes address transition detection to begin decoding the column-address immediately after a new column-address is present on the address bus lines and without waiting for the column-address strobe signal to synchronize with the rising or falling edge of the synchronizing clock signal. Also disclosed is a manner of controlling the latching circuitry whereby each new column-address may be decoded and held within a buffer until the column-address strobe signal notifies the circuitry that the column-address is correct and is to be input into the microprocessor. Thus, each new column-address will be decoded immediately after it is present on the address lines and undesired column-addresses will be discarded, while desired column-addresses are input into the memory array bank immediately upon the presence of the column-address strobe which denotes that the column-address is final. The present invention improves the access times of read and write operations in synchronous DRAM memory by up to a complete clock cycle.
公开/授权文献
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