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US6113648A Method and apparatus for protecting gate electrodes of target transistors in the gate array from gate charging by employing free transistors in the gate array 失效
用于通过在门阵列中采用自由晶体管来保护门阵列中的目标晶体管的栅电极不进行栅极充电的方法和装置

  • 专利标题: Method and apparatus for protecting gate electrodes of target transistors in the gate array from gate charging by employing free transistors in the gate array
  • 专利标题(中): 用于通过在门阵列中采用自由晶体管来保护门阵列中的目标晶体管的栅电极不进行栅极充电的方法和装置
  • 申请号: US24830
    申请日: 1998-02-17
  • 公开(公告)号: US6113648A
    公开(公告)日: 2000-09-05
  • 发明人: Mark Edward SchueleinEdward Butler
  • 申请人: Mark Edward SchueleinEdward Butler
  • 申请人地址: CA Santa Clara
  • 专利权人: Intel Corporation
  • 当前专利权人: Intel Corporation
  • 当前专利权人地址: CA Santa Clara
  • 主分类号: H01L27/02
  • IPC分类号: H01L27/02 H01L27/118 H01L23/62 H01L27/10
Method and apparatus for protecting gate electrodes of target
transistors in the gate array from gate charging by employing free
transistors in the gate array
摘要:
In a gate array having a plurality of free transistors and target transistors, a method and apparatus for protecting a gate electrode of a target transistor from gate charge by employing a free transistor as a gate electrode protection device. A target transistor is a transistor that has been determined to need gate charging protection. A free transistor is a transistor in the gate array which is not used to implement the logic design as embodied in the gate array. Initially, a base array is formed without any metal layers. Then, a determination is made as to which transistors require gate charging protection. The gate electrode of each target transistor determined to require gate charging is coupled to an associated drain or source electrode of a free transistor of the gate array. The gate electrode of the free transistor is connected to an appropriate voltage reference to turn the free transistor off.
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