Invention Grant
US6114219A Method of manufacturing an isolation region in a semiconductor device
using a flowable oxide-generating material
失效
使用可流动的氧化物发生材料制造半导体器件中的隔离区域的方法
- Patent Title: Method of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating material
- Patent Title (中): 使用可流动的氧化物发生材料制造半导体器件中的隔离区域的方法
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Application No.: US929865Application Date: 1997-09-15
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Publication No.: US6114219APublication Date: 2000-09-05
- Inventor: Thomas E. Spikes, Jr. , Sey-Ping Sun , Robert Dawson
- Applicant: Thomas E. Spikes, Jr. , Sey-Ping Sun , Robert Dawson
- Applicant Address: CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: CA Sunnyvale
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/76
Abstract:
A method for the manufacture of a semiconductor device with trench isolation regions includes forming at least one trench in a substrate to define one or more isolation regions. At least a portion of the trench is filled with a flowable oxide-generating material which is then formed into an oxide layer. An optional dielectric layer can be deposited over the oxide layer. A portion of the oxide layer and/or the optional dielectric layer is removed to generate a substantially planer surface.
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