发明授权
- 专利标题: Complementary MOS level translating apparatus and method
- 专利标题(中): 互补MOS电平转换装置及方法
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申请号: US75572申请日: 1998-05-11
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公开(公告)号: US6114874A公开(公告)日: 2000-09-05
- 发明人: James E. Bales
- 申请人: James E. Bales
- 申请人地址: CA Santa Clara
- 专利权人: National Semiconductor Corporation
- 当前专利权人: National Semiconductor Corporation
- 当前专利权人地址: CA Santa Clara
- 主分类号: H03K19/0175
- IPC分类号: H03K19/0175
摘要:
A level translating circuit suitable for converting ECL level signals to CMOS level signals. The ECL signal is converted to a pair of buffered differential signals that are level shifted and divided to produce four transistor drive signal, two of which are connected to the respective gate and source of a P-type MOS transistor and two of which are connected to the respective gate and source of another P-type MOS transistor. An N-type transistor is connected in series with each of the P-type transistors so as to provide CMOS outputs at the junction of the N and P-type transistors.
公开/授权文献
- USD397680S Electronic organizer 公开/授权日:1998-09-01
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