Invention Grant
US6117572A YBCO epitaxial films deposited on substrate and buffer layer compounds
in the system Ca.sub.2 MeSbO.sub.6 where Me=Al, Ga, Sc and In
失效
沉积在衬底上的YBCO外延膜和体系Ca2MeSbO6中的缓冲层化合物，其中Me = Al，Ga，Sc和In
- Patent Title: YBCO epitaxial films deposited on substrate and buffer layer compounds in the system Ca.sub.2 MeSbO.sub.6 where Me=Al, Ga, Sc and In
- Patent Title (中): 沉积在衬底上的YBCO外延膜和体系Ca2MeSbO6中的缓冲层化合物，其中Me = Al，Ga，Sc和In
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Application No.: US978364Application Date: 1997-11-25
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Publication No.: US6117572APublication Date: 2000-09-12
- Inventor: Steven C. Tidrow , Arthur Tauber , William D. Wilber , Robert D. Finnegan
- Applicant: Steven C. Tidrow , Arthur Tauber , William D. Wilber , Robert D. Finnegan
- Applicant Address: DC Washington
- Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee Address: DC Washington
- Main IPC: C01G30/02
- IPC: C01G30/02 ; C23C14/08 ; H01L39/24 ; B32B9/00 ; C01G15/00
Abstract:
Compounds of the general formula Ca.sub.2 MeSbO.sub.6 where Me is a 3+ ion selected from the group consisting of aluminum (Al), scandium (Sc), indium (In), gallium (Ga), or a rare earth metal have been prepared and included as the substrate or barrier dielectric in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.
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