Invention Grant
US6117572A YBCO epitaxial films deposited on substrate and buffer layer compounds in the system Ca.sub.2 MeSbO.sub.6 where Me=Al, Ga, Sc and In 失效
沉积在衬底上的YBCO外延膜和体系Ca2MeSbO6中的缓冲层化合物,其中Me = Al,Ga,Sc和In

YBCO epitaxial films deposited on substrate and buffer layer compounds
in the system Ca.sub.2 MeSbO.sub.6 where Me=Al, Ga, Sc and In
Abstract:
Compounds of the general formula Ca.sub.2 MeSbO.sub.6 where Me is a 3+ ion selected from the group consisting of aluminum (Al), scandium (Sc), indium (In), gallium (Ga), or a rare earth metal have been prepared and included as the substrate or barrier dielectric in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.
Information query
Patent Agency Ranking
0/0