发明授权
US6117732A Use of a metal contact structure to increase control gate coupling
capacitance for a single polysilicon non-volatile memory cell
有权
使用金属接触结构来增加单个多晶硅非易失性存储单元的控制栅极耦合电容
- 专利标题： Use of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cell
- 专利标题（中）： 使用金属接触结构来增加单个多晶硅非易失性存储单元的控制栅极耦合电容
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申请号： US193671申请日： 1998-11-17
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公开(公告)号： US6117732A公开(公告)日： 2000-09-12
- 发明人: Wen-Ting Chu , Chuan-Li Chang , Ming-Chou Ho , Chang-Song Lin , Di-Son Kuo
- 申请人： Wen-Ting Chu , Chuan-Li Chang , Ming-Chou Ho , Chang-Song Lin , Di-Son Kuo
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8247
摘要：
A method for fabricating a single polysilicon, non-volatile memory device, has been developed. The method features the use of a metal structure, comprised to contact an underlying control gate region, located in the semiconductor structure, in addition to providing the upper electrode, for a capacitor structure. The capacitor structure, in addition to the metal structure used as the upper electrode, is also comprised of an underlying capacitor dielectric layer, and an underlying polysilicon floating gate structure, used as the lower electrode of the capacitor structure. The creation of the capacitor structure results in performance increases realized via the additional control gate coupling capacitance, obtained via the novel configuration described in this invention.
公开/授权文献
- US5690435A Serial printing apparatus with sentence memory and display 公开/授权日：1997-11-25
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