发明授权
- 专利标题： Method for making a high performance transistor
- 专利标题（中）： 制造高性能晶体管的方法
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申请号： US079760申请日： 1998-05-15
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公开(公告)号： US6117742A公开(公告)日： 2000-09-12
- 发明人: Mark I. Gardner , Fred Hause
- 申请人： Mark I. Gardner , Fred Hause
- 申请人地址： TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： TX Austin
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/8234 ; H01L29/49 ; H01L21/3205 ; H01L21/4763
摘要：
The present invention is directed to a method for manufacturing a semiconductor device having a reduced feature size and improved electrical performance characteristics. The method includes forming at least one masking layer and forming an opening in said masking layer. The method further includes forming a metal layer above at least a portion of said masking layer and removing said masking layer to define a gate electrode comprised of a portion of said metal layer. The method also includes removing the masking layer to expose portions of the surface of the substrate and doping the exposed portions of the substrate to define at least one source or drain region.
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