发明授权
US6117777A Chemical mechanical polish (CMP) endpoint detection by colorimetry
失效
化学机械抛光(CMP)通过比色法终点检测
- 专利标题: Chemical mechanical polish (CMP) endpoint detection by colorimetry
- 专利标题(中): 化学机械抛光(CMP)通过比色法终点检测
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申请号: US902847申请日: 1997-07-30
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公开(公告)号: US6117777A公开(公告)日: 2000-09-12
- 发明人: Mei-Sheng Zhou , Simon Chooi
- 申请人: Mei-Sheng Zhou , Simon Chooi
- 申请人地址: SGX Singapore
- 专利权人: Chartered Semiconductor Manufacturing Co.
- 当前专利权人: Chartered Semiconductor Manufacturing Co.
- 当前专利权人地址: SGX Singapore
- 主分类号: B24B37/04
- IPC分类号: B24B37/04 ; B24B49/12 ; H01L21/3105 ; H01L21/66 ; H01L21/00
摘要:
A method for fabricating a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a planarizable layer. The planarizable layer has a lower residual portion of the planarizable layer and an upper removable portion of the planarizable layer, where one of the lower residual portion of the planarizable layer and the upper removable portion of the planarizable layer has a colorant incorporated therein. The colorant is positioned at a location which assists in monitoring and controlling an endpoint of a chemical mechanical polish (CMP) planarizing method employed in planarizing the planarizable layer. There is then planarized through the chemical mechanical polish (CMP) planarizing method the planarizable layer while employing the colorant concentration to determine the endpoint of the chemical mechanical polish (CMP) planarizing method.
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