Provided is a semiconductor flip chip die metal layout which provides a flat UBM where surface metal pads are narrower than UBMs in order to accommodate decreased die pitch. This is achieved by depositing a metal region adjacent to and closely spaced from the pad which, together with the pad, is capable of providing a substrate that will result in a substantially flat passivation layer surface on which the UBM is subsequently deposited. The adjacent closely spaced metal region may be provided by bringing metal traces closer to a reduced size surface metal pad (into the die surface area underlying the UBM), and/or by depositing dummy metal similarly near the pad. The dummy metal may also be deposited over the whole chip surface area not occupied by other electrical components.