- 专利标题： Manufacturing method for semiconductor device
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申请号： US19505申请日： 1998-02-06
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公开(公告)号： US6121160A公开(公告)日： 2000-09-19
- 发明人: Kinichi Igarashi , Hideaki Sato
- 申请人： Kinichi Igarashi , Hideaki Sato
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-023592 19970206
- 主分类号： H01L21/312
- IPC分类号： H01L21/312 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/31 ; H01L21/469
摘要：
A manufacturing method for a semiconductor device, wherein a polyimide-based resin layer is covered with a P-CVD oxide silicon film or the like before it is subjected to degassing process in order to prevent blisters or cracks of a cover film of a semiconductor device which has the polyimide-based resin layer as an interlayer insulating film. This makes it possible to take the semiconductor device out in open air after the degassing process and to prevent the dispersion of reaction products resulting from amidation during the degassing process.
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- USD367710S Spa cover 公开/授权日：1996-03-05
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