发明授权
- 专利标题： Method for improving etch uniformity during a wet etching process
- 专利标题（中）： 在湿蚀刻工艺中提高蚀刻均匀性的方法
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申请号： US206642申请日： 1998-12-07
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公开(公告)号： US6123865A公开(公告)日： 2000-09-26
- 发明人: Wei-Chih Lin , Ming-Sheng Kao , Ming-Li Kung , Chih-Ming Lin
- 申请人： Wei-Chih Lin , Ming-Sheng Kao , Ming-Li Kung , Chih-Ming Lin
- 申请人地址： TWX TWX DEX Munich
- 专利权人： ProMOS Technologies, Inc.,Mosel Vitelic, Inc.,Siemens AG
- 当前专利权人： ProMOS Technologies, Inc.,Mosel Vitelic, Inc.,Siemens AG
- 当前专利权人地址： TWX TWX DEX Munich
- 优先权： TWX87115022 19980909
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/3213 ; H01L21/302
摘要：
A method for improving etch uniformity during a wet etching process is disclosed. The method comprises the steps of first rinsing the wafer to form a water film over the wafer surface, followed by liquid phase etching. The water film helps the subsequent viscous etchant to be spread across the wafer surface more uniformly to thereby improve the etch uniformity.
公开/授权文献
- US4419797A Machining center 公开/授权日：1983-12-13
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