发明授权
US6124157A Integrated non-volatile and random access memory and method of forming
the same
失效
集成的非易失性和随机存取存储器及其形成方法
- 专利标题： Integrated non-volatile and random access memory and method of forming the same
- 专利标题（中）： 集成的非易失性和随机存取存储器及其形成方法
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申请号： US45294申请日： 1998-03-20
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公开(公告)号： US6124157A公开(公告)日： 2000-09-26
- 发明人: Irfan Rahim
- 申请人： Irfan Rahim
- 申请人地址： CA San Jose
- 专利权人： Cypress Semiconductor Corp.
- 当前专利权人： Cypress Semiconductor Corp.
- 当前专利权人地址： CA San Jose
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/8247 ; H01L27/105 ; H01L21/8238
摘要：
A method of forming non-volatile memory (e.g., an EEPROM device) and a CMOS device (e.g., a RAM), on a single die or chip, and a structure formed by the method. In one embodiment, the control gate of the storage transistor as well as the isolation gate of the isolation transistor may be formed during the same manufacturing process step, and thus may be formed of the same gate poly material and may have similar thickness.
公开/授权文献
- USD397548S Body worn storage pouch 公开/授权日：1998-09-01
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