发明授权
US6124171A Method of forming gate oxide having dual thickness by oxidation process
有权
通过氧化工艺形成具有双重厚度的栅极氧化物的方法
- 专利标题： Method of forming gate oxide having dual thickness by oxidation process
- 专利标题（中）： 通过氧化工艺形成具有双重厚度的栅极氧化物的方法
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申请号： US160556申请日： 1998-09-24
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公开(公告)号： US6124171A公开(公告)日： 2000-09-26
- 发明人: Reza Arghavani , Bruce Beattie , Robert S. Chau , Jack Kavalieros , Bob McFadden
- 申请人： Reza Arghavani , Bruce Beattie , Robert S. Chau , Jack Kavalieros , Bob McFadden
- 申请人地址： CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/336
摘要：
Transistors are formed on the substrate having two different thickness' of gate oxides. A silicon nitride mask is used to protect one of the gate oxides while the other is grown. A nitride mask is formed from a hydrogen balanced nitride layer formed using direct plasma deposited nitride with an ammonia and silane chemistry. In one embodiment the nitride mask remains in place in the completed transistor.
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