An improved contact structure and process for forming an improved contact structure for a semiconductor device. A metal (14) is formed on a first metal layer (12) positioned on a substrate (10) The metal (14) is a Group VIIB or Group VIII metal or metal oxide and increases the electrically conductive surface area (25) of the first metal layer (12). In one embodiment, a Group VIIB or Group VIII metal layer is deposited onto the first metal layer and the Group VIIB or Group VIII metal layer is anisotropically etched to form sidewall spacers (24). An insulating layer (16) is deposited overlying the first conductive layer (12) and the sidewall spacers (24). A via opening (18) is formed in the insulation layer (16) to expose a portion of the electrically conductive surface area (25). A second metal layer (22) fills the opening (18) and forms a metallurgical contact to the first metal layer (12).