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公开(公告)号：US6127257A
公开(公告)日：2000-10-03
申请号：US154366
申请日：1993-11-18
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/7685 , H01L21/76852 , H01L21/76885 , H01L23/5226 , H01L2221/1078 , H01L23/53223 , H01L23/53257 , H01L2924/0002
摘要： An improved contact structure and process for forming an improved contact structure for a semiconductor device. A metal (14) is formed on a first metal layer (12) positioned on a substrate (10) The metal (14) is a Group VIIB or Group VIII metal or metal oxide and increases the electrically conductive surface area (25) of the first metal layer (12). In one embodiment, a Group VIIB or Group VIII metal layer is deposited onto the first metal layer and the Group VIIB or Group VIII metal layer is anisotropically etched to form sidewall spacers (24). An insulating layer (16) is deposited overlying the first conductive layer (12) and the sidewall spacers (24). A via opening (18) is formed in the insulation layer (16) to expose a portion of the electrically conductive surface area (25). A second metal layer (22) fills the opening (18) and forms a metallurgical contact to the first metal layer (12).
摘要翻译： 用于形成用于半导体器件的改进的接触结构的改进的接触结构和工艺。 在位于基板（10）上的第一金属层（12）上形成金属（14）。金属（14）是VIIB族或VIII族金属或金属氧化物，并且增加了导电表面积（25） 第一金属层（12）。 在一个实施方案中，将第VIIB族或第VIII族金属层沉积到第一金属层上，并且第VIIB族或第VIII族金属层被各向异性蚀刻以形成侧壁间隔物（24）。 绝缘层（16）沉积在第一导电层（12）和侧壁间隔物（24）上。 在绝缘层（16）中形成通孔（18），以暴露导电表面区域（25）的一部分。 第二金属层（22）填充开口（18）并与第一金属层（12）形成冶金接触。
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2.发明授权
公开(公告)号：US5356833A
公开(公告)日：1994-10-18
申请号：US43104
申请日：1993-04-05
IPC分类号： C23C14/18 , C23C14/58 , C23C26/00 , H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8244 , H01L21/44 , H01L21/48
CPC分类号： C23C14/5806 , C23C14/185 , C23C14/58 , C23C14/5893 , C23C26/00 , H01L21/28512 , H01L21/76895 , H01L27/11 , H01L28/60
摘要： The present invention includes a process for forming an intermetallic layer over a semiconductor substrate and a device formed by the process. The intermetallic layer includes a material having a molecular formula of AB.sub.3, wherein A is an element having an atomic number of 39-41 or 57-73 and B is an element having an atomic of 45, 46, 77, or 78. In one process, an intermetallic member is formed by forming a patterned layer including the A or B element over a substrate, depositing a layer of the other element, and reacting them. The process forms a self-aligned member. Chemical-mechanical polishing, ion milling, and a lift-off method may be performed to pattern an AB.sub.3 intermetallic layer. In a device, an intermetallic member may act as a gate electrode, an electrode of a capacitor, a conductive spacer, an interconnect, or a contact or via plug. An almost endless number of devices may be formed with the intermetallic members.
摘要翻译： 本发明包括在半导体衬底上形成金属间化合物的方法和通过该方法形成的器件。 金属间化合物层包括分子式为AB 3的材料，其中A是原子序数为39-41或57-73的元素，B是原子数为45,46,77或78的元素。在一个 通过在基板上形成包含A或B元件的图案层，沉积另一元素层并使其反应来形成金属间元件。 该过程形成自对准成员。 可以进行化学机械抛光，离子研磨和剥离方法以对AB3金属间层进行图案化。 在器件中，金属间元件可以用作栅电极，电容器的电极，导电间隔物，互连或接触或通孔塞。 可以用金属间构件形成几乎无数的装置。
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公开(公告)号：US4619038A
公开(公告)日：1986-10-28
申请号：US765631
申请日：1985-08-15
IPC分类号： H01L29/78 , H01C7/00 , H01L21/28 , H01L21/285 , H01L21/768 , H01L29/43 , H01L21/441
CPC分类号： H01L29/41783 , H01L21/28061 , H01L21/28518 , H01L21/76889 , Y10S148/147
摘要： A process for selective formation of a titanium silicide, TiSi.sub.2, layer at high temperatures and low pressures via chemical vapor deposition during semiconductor device manufacturing. At 700.degree. to 1000.degree. C. and 0.5 to 1.5 torr, TiSi.sub.2 deposits only on exposed silicon or polysilicon surfaces and not at all on neighboring silicon dioxide. The process provides an excellent means of providing low resistivity interconnects without a mask step or subsequent annealing and removal of unreacted titanium.
摘要翻译： 在半导体器件制造期间通过化学气相沉积在高温和低压下选择性地形成硅化钛TiSi 2层的工艺。 在700℃至1000℃和0.5至1.5托之间，TiSi 2只沉积在暴露的硅或多晶硅表面上，而不是沉积在相邻的二氧化硅上。 该方法提供了提供低电阻率互连的优良手段，而不需要掩模步骤或随后的退火和去除未反应的钛。
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公开(公告)号：US4756272A
公开(公告)日：1988-07-12
申请号：US869638
申请日：1986-06-02
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45578 , C23C16/455 , C30B25/14
摘要： A quick-release multiple gas injection pipe connector fitting for removable attachment to a gas reaction chamber having a plurality of gas injection passages. The fitting permits a number of gas inlet lines to be removed from or attached to a reaction chamber fixture in one operation without a separate removal or attachment step for each gas line. The fitting also facilitates a process where the reaction gases are preferably mixed only at the reaction site and not before.
摘要翻译： 一种快速释放多气体注入管连接器配件，用于可拆卸地连接到具有多个气体注入通道的气体反应室。 该装置允许在一个操作中将多个气体入口管路从反应室固定装置中移除或连接到反应室固定装置上，而不需要为每个气体管线单独地移除或附接步骤。 该配件还有助于其中反应气体优选仅在反应部位而不是之前混合的方法。
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5.发明授权
公开(公告)号：US5429989A
公开(公告)日：1995-07-04
申请号：US190966
申请日：1994-02-03
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76877 , H01L21/28556 , H01L21/76843
摘要： A process for fabricating a metallization structure includes the formation of an interlayer (20) using an MOCVD deposition process. A metal-organic precursor, having as one component tungsten, is used to deposit the interlayer (20) onto a surface region (18) of a substrate (10) at the bottom of an opening (16). The MOCVD deposition process forms a conformal layer which evenly coats all surfaces of the opening (16). Next, a refractory metal layer (22) is deposited to overlie the interlayer (20). Because of conformal nature of the MOCVD deposition process, refractory metal layer can be formed using corrosive gasses such as tungsten hexafluoride.
摘要翻译： 用于制造金属化结构的工艺包括使用MOCVD沉积工艺形成中间层（20）。 使用具有钨一种组分的金属有机前体将中间层（20）沉积在开口（16）的底部的基板（10）的表面区域（18）上。 MOCVD沉积工艺形成均匀地涂覆开口（16）的所有表面的共形层。 接下来，沉积难熔金属层（22）以覆盖中间层（20）。 由于MOCVD沉积工艺的保形性，难熔金属层可以使用六氟化钨等腐蚀性气体形成。
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6.发明授权Method for forming a material layer in a semiconductor device using liquid phase deposition 失效在使用液相沉积的半导体器件中形成材料层的方法
公开(公告)号：US5236874A
公开(公告)日：1993-08-17
申请号：US666309
申请日：1991-03-08
IPC分类号： C01B13/32 , C01G1/00 , C01G3/00 , C01G23/00 , C23C18/02 , H01L21/208 , H01L21/288 , H01L21/314 , H01L21/316 , H01L39/24
CPC分类号： H01L21/288 , C23C18/02 , H01L39/2451 , H01L21/31691
摘要： A method is provided for forming a material layer in a semiconductor device using liquid phase deposition. A material layer such as a metal layer, a dielectric layer, a semiconductor layer or a superconducting layer is deposited by the liquid-phase thermal decomposition of a metal-organic precursor dissolved in an anhydrous organic solvent. The organic solvent has a chemical polarity corresponding to the selected metal-organic precursor and has a normal boiling point above the decomposition temperature of the selected precursor. As a result of few restrictions on the range of precursor physical properties, the present invention enables the use of a wide variety of molecular compositions which can be used for the formation of an equally wide variety of material layers. In one embodiment of the invention, a semiconductor substrate is subjected to a liquid mixture comprising a metal-substituted heterocyclic acetylacetonate precursor dissolved in tetradecane (b.p. 254.degree.C.). Depending upon the structure of the acetylacetonate, either a metal or a metal oxide film is deposited in the liquid phase on a semiconductor substrate immersed in a solution which is maintained at the decomposition temperature of the acetylacetonate precursor.
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公开(公告)号：US4630669A
公开(公告)日：1986-12-23
申请号：US765640
申请日：1985-08-15
CPC分类号： F28D7/026 , C23C16/54 , C30B25/08 , C30B25/10 , F28F9/0219 , F28F2220/00 , Y10S277/91 , Y10S277/93
摘要： A heat exchanger apparatus having two sleeves which fit together to seal a sinuous heat exchange fluid channel between them where the channel is open along its length prior to assembly. The sleeves may be made removable to permit easy cleaning of the heat exchange fluid channel. The heat exchange fluid channel may thus be directly cleaned along its entire length in contrast to conventional heat exchangers employing tubes, where the tube interior can be accessed only from the ends. In one embodiment, the channel has a rectangular cross-section to enhance the heat exchange capability of the apparatus.
摘要翻译： 一种具有两个套筒的热交换器装置，它们组合在一起，以密封其间的弯曲的热交换流体通道，其中通道在组装之前沿其长度敞开。 套筒可以是可移除的，以允许容易地清洁热交换流体通道。 因此，与使用管的常规热交换器相比，热交换流体通道可以沿其整个长度直接清洁，其中管内部仅可从端部进入。 在一个实施例中，通道具有矩形横截面以增强设备的热交换能力。
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