发明授权
- 专利标题： Semiconductor device having high aspect ratio contacts
- 专利标题（中）： 具有高纵横比接触的半导体器件
-
申请号： US059671申请日： 1998-04-13
-
公开(公告)号： US6127732A公开(公告)日： 2000-10-03
- 发明人: Shubneesh Batra , Gurtej Sandhu
- 申请人： Shubneesh Batra , Gurtej Sandhu
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/532 ; H01C23/48
摘要：
Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.
公开/授权文献
- USD405484S Handle for a dumbbell 公开/授权日：1999-02-09
信息查询
IPC分类:
