A method for forming a thin film resistor includes providing a sputter target having one or more silicon containing components and chromium diboride. For example, the one or more silicon containing components may include silicon and/or silicon carbide. The resistor film is then sputter deposited on a surface using a nitrogen containing sputter gas. The resistor material generally is sputtered to a thickness in the range of about 125 .ANG. to about 500 .ANG. while maintaining a desirable sheet resistance. The resistor film may be used in one or more electrical circuits, such as in an implantable medical device.