发明授权
US06130137A Method of forming a resistor and integrated circuitry having a resistor
construction
有权
形成电阻器的方法和具有电阻器结构的集成电路
- 专利标题： Method of forming a resistor and integrated circuitry having a resistor construction
- 专利标题（中）： 形成电阻器的方法和具有电阻器结构的集成电路
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申请号： US170792申请日： 1998-10-13
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公开(公告)号： US06130137A公开(公告)日： 2000-10-10
- 发明人: Kirk Prall , Pierre C. Fazan , Aftab Ahmad , Howard E. Rhodes , Werner Juengling , Pai-Hung Pan , Tyler Lowrey
- 申请人： Kirk Prall , Pierre C. Fazan , Aftab Ahmad , Howard E. Rhodes , Werner Juengling , Pai-Hung Pan , Tyler Lowrey
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/20
摘要：
A method of forming a resistor from semiconductive material includes, a) providing a substrate; b) providing a layer of semiconductive material over the substrate; c) providing a pair of openings into the semiconductive material layer; d) plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive pillars within the semiconductive material, the pair of pillars having semiconductive material extending therebetween to provide a resistor construction; and e) providing a conductive node to each of the electrically conductive pillars. An integrated circuit incorporating a resistor construction includes, i) a layer of semiconductive material; ii) a pair of electrically conductive pillars provided within the semiconductive material layer, the pair of pillars being separated from one another and thereby having a mass of the semiconductive material extending therebetween; and iii) an electrically conductive node in electrical connection with each of the respective conductive pillars. Alternately, a resistor is provided within a semiconductive substrate using different concentration diffusion regions.
公开/授权文献
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