发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US267376申请日： 1999-03-15
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公开(公告)号： US6133150A公开(公告)日： 2000-10-17
- 发明人: Kazuaki Nakajima , Yasushi Akasaka , Kiyotaka Miyano , Kyoichi Suguro
- 申请人： Kazuaki Nakajima , Yasushi Akasaka , Kiyotaka Miyano , Kyoichi Suguro
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX7-217882 19950825; JPX7-240735 19950825; JPX8-060953 19960318; JPX8-189054 19960718
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/768 ; H01L21/8238 ; H01L29/45 ; H01L21/302
摘要：
A semiconductor device includes a semiconductor substrate, and a laminated film insulatively formed over the semiconductor substrate, wherein the laminated film includes a semiconductor film, a metal film of refractory metal formed on the semiconductor film, a conductive oxidation preventing film disposed between the metal film and the semiconductor film, for preventing oxidation of the semiconductor film in an interface between the metal film and the semiconductor film, and an oxide film formed on a side surface of the semiconductor film and formed to extend into upper and lower portions of the semiconductor film in a bird's beak form.
公开/授权文献
- US5492144A Multi-compartmented vacuum tank 公开/授权日：1996-02-20
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