发明授权
- 专利标题： Compound semiconductor device and method for producing the same
- 专利标题（中）： 化合物半导体器件及其制造方法
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申请号： US802126申请日： 1997-02-19
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公开(公告)号： US6133592A公开(公告)日： 2000-10-17
- 发明人: Katsuhiko Kishimoto , John Kevin Twynam , Naoki Takahashi
- 申请人： Katsuhiko Kishimoto , John Kevin Twynam , Naoki Takahashi
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-031043 19960219
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/737 ; H01L29/78 ; H01L33/00
摘要：
A compound semiconductor device includes a contact structure having a plurality of layers provided on a compound semiconductor layer and an electrode provided on the contact structure. The contact structure includes a first contact layer made of In.sub.x Ga.sub.1-x As (0.9.ltoreq.x.ltoreq.1) on the side closest to the electrode.
公开/授权文献
- US5191807A Indexed gear-shift mechanism 公开/授权日：1993-03-09
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