发明授权
- 专利标题： MOS semiconductor device
- 专利标题（中）： MOS半导体器件
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申请号： US352780申请日： 1999-07-14
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公开(公告)号： US6133611A公开(公告)日： 2000-10-17
- 发明人: Akira Yamaguchi
- 申请人： Akira Yamaguchi
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX10-200584 19980715
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L29/76 ; H01L29/96
摘要：
In a CMOS circuit including a source diffusion layer and a well region which are at the same potential, a P.sup.+ -type source diffusion layer and an N.sup.+ -type substrate diffusion layer are formed in a portion corresponding to a source region in a surface area of an N-type well region. A source contact is formed on the source and substrate diffusion layers through a salicide layer to connect the diffusion layers to their upper wiring layer. Since, therefore, the source contact can be arranged closer to a P-type well region, the layout area can be reduced.
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