High stress oxide to eliminate BPSG/SiN cracking

Invention Grant

US6136688A High stress oxide to eliminate BPSG/SiN cracking 有权

Title translation: 高应力氧化物消除BPSG / SiN开裂

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Patent Title: High stress oxide to eliminate BPSG/SiN cracking
Patent Title (中): 高应力氧化物消除BPSG / SiN开裂
Application No.: US421508

Application Date: 1999-10-20
Publication No.: US6136688A

Publication Date: 2000-10-24
Inventor: Keng-Chu Lin , Kuang-Chao Chen , Rong-Wu Chien , Lian-Fa Hung , Pang-Yen Tsai , Ching-Chang Chang
Applicant: Keng-Chu Lin , Kuang-Chao Chen , Rong-Wu Chien , Lian-Fa Hung , Pang-Yen Tsai , Ching-Chang Chang
Applicant Address: TWX Hsin-Chu
Assignee: Vanguard International Semiconductor Corporation
Current Assignee: Vanguard International Semiconductor Corporation
Current Assignee Address: TWX Hsin-Chu
Main IPC: H01L21/316
IPC: H01L21/316 ; H01L21/318 ; H01L21/768 ; H01L21/4763

High stress oxide to eliminate BPSG/SiN cracking

Abstract:

The present invention is a method of capping with a high compressive stress oxide, a boron phospho-silicate glass (BPSG) interlayer dielectric (ILD) gapfill that has been deposited on a topographic silicon substrate, in order to eliminate the formation of cracks in subsequently deposited silicon nitride (SiN) layers, other subsequently deposited high tensile stress layers and cracks that result from other post-BPSG deposition high temperature processes.

Abstract(Chinese):

本发明是一种用高压缩应力氧化物覆盖的方法，已经沉积在地形硅衬底上的硼磷硅酸盐玻璃（BPSG）层间电介质（ILD）间隙填料，以便于随后消除裂纹的形成沉积的氮化硅（SiN）层，其它随后沉积的高拉伸应力层和由其他后BPSG沉积高温工艺引起的裂纹。

Public/Granted literature

US5572542A Technique for locking an external cavity large-area laser diode to a passive optical cavity Public/Granted day:1996-11-05

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）
H01L21/316	.......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层