发明授权
- 专利标题： Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same
- 专利标题（中）： 使用含氟源前体形成的钽和钽基膜及其制备方法
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申请号： US313618申请日： 1999-05-18
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公开(公告)号： US6139922A公开(公告)日： 2000-10-31
- 发明人: Alain E. Kaloyeros , Barry C. Arkles
- 申请人： Alain E. Kaloyeros , Barry C. Arkles
- 申请人地址： PA Tullytown NY Albany
- 专利权人： Gelest, Inc.,The Research Foundation of State University of New York
- 当前专利权人： Gelest, Inc.,The Research Foundation of State University of New York
- 当前专利权人地址： PA Tullytown NY Albany
- 主分类号： C23C16/14
- IPC分类号： C23C16/14 ; C23C16/18 ; C23C16/34 ; C23C16/42 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; C23C16/08 ; H01L21/44
摘要：
A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) a reactant gas, and maintaining the temperature of the substrate within the chamber as from about 70.degree. C. to about 675.degree. C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I):Ta(F.sub.5-q-p)(X.sub.q-p)(R.sub.p) (I)wherein X is selected from the group consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the group consisting of hydrogen and lower alkyl.