发明授权
- 专利标题: Method of producing a buried boss diaphragm structure in silicon
- 专利标题(中): 在硅中产生埋入式凸台光阑结构的方法
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申请号: US833417申请日: 1992-02-10
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公开(公告)号: US6140143A公开(公告)日: 2000-10-31
- 发明人: Lee A. Christel , Theodore J. Vermeulen
- 申请人: Lee A. Christel , Theodore J. Vermeulen
- 申请人地址: CA Fremont
- 专利权人: Lucas Novasensor Inc.
- 当前专利权人: Lucas Novasensor Inc.
- 当前专利权人地址: CA Fremont
- 主分类号: H01L29/84
- IPC分类号: H01L29/84 ; B81B3/00 ; B81C1/00 ; G01L9/00 ; H01L21/00
摘要:
A method of micromachining silicon to form relatively thick boss areas and relatively thin flexure areas. The method includes the provision of a deep diffusion of n-type dopant atoms in the vicinity of the desired thick boss structures on a p-type silicon substrate. A layer having a thickness equal to the desired thickness of a flexure area is epitaxially grown of n-type doped silicon over the previously doped p-type substrate. Finally, the p-type doped silicon is etched away by a suitable etchant leaving relatively thick boss areas joined by relatively thin flexure areas.
公开/授权文献
- US5904289A Reusable gift wrap 公开/授权日:1999-05-18