公开(公告)号：US6140143A

公开(公告)日：2000-10-31

申请号：US833417

申请日：1992-02-10

申请人： Lee A. Christel ,  Theodore J. Vermeulen

发明人： Lee A. Christel ,  Theodore J. Vermeulen

IPC分类号： H01L29/84 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/00

CPC分类号： G01L9/0042

摘要： A method of micromachining silicon to form relatively thick boss areas and relatively thin flexure areas. The method includes the provision of a deep diffusion of n-type dopant atoms in the vicinity of the desired thick boss structures on a p-type silicon substrate. A layer having a thickness equal to the desired thickness of a flexure area is epitaxially grown of n-type doped silicon over the previously doped p-type substrate. Finally, the p-type doped silicon is etched away by a suitable etchant leaving relatively thick boss areas joined by relatively thin flexure areas.

摘要翻译： 一种微加工硅以形成较厚的凸起区域和较薄的弯曲区域的方法。 该方法包括在p型硅衬底上在期望的厚凸起结构附近提供n型掺杂剂原子的深扩散。 在预先掺杂的p型衬底上，n型掺杂硅的外延生长具有等于弯曲区域所需厚度的厚度的层。 最后，通过合适的蚀刻剂蚀刻p型掺杂的硅，留下相对较薄的凸起区域，其相对薄的弯曲区域连接。