发明授权
- 专利标题： Method of planarizing a structure having an interpoly layer
- 专利标题（中）： 平面化具有多晶硅层的结构的方法
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申请号： US928205申请日： 1997-09-12
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公开(公告)号： US06143664A公开(公告)日： 2000-11-07
- 发明人: Liang-Gi Yao , Chung-Ju Lee , Yue-Feng Chen , Wei-Ray Lin , Yeur-Luen Tu
- 申请人： Liang-Gi Yao , Chung-Ju Lee , Yue-Feng Chen , Wei-Ray Lin , Yeur-Luen Tu
- 申请人地址： TWX Hsinchu
- 专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人地址： TWX Hsinchu
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/00
摘要：
A method of planarizing a structure having an interpoly layer is disclosed. The method includes forming an undoped silica glass layer on at least a polysilicon region formed on a semiconductor substrate. Next, a spin-on-glass layer is formed over the undoped silica glass layer. Finally, the spin-on-glass layer is etched back, thereby planarizing the structure having the interpoly layer.
公开/授权文献
- USD344366S Nail cutter 公开/授权日：1994-02-15
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