发明授权
- 专利标题： Ultra-thin oxide for semiconductors
- 专利标题（中）： 半导体用超薄氧化物
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申请号： US47951申请日： 1998-03-25
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公开(公告)号： US6144063A公开(公告)日： 2000-11-07
- 发明人: Geoffrey Choh-Fei Yeap , Zoran Krivokapic , Ming-Ren Lin
- 申请人： Geoffrey Choh-Fei Yeap , Zoran Krivokapic , Ming-Ren Lin
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L29/423 ; H01L29/72
摘要：
A semiconductor device having a transistor or capacitor with an ultra-thin oxide, which is thinner than 10 angstrom in thickness, is manufactured by eliminating a gate oxidation step in the processing and using the polysilicon reoxidation step to create the ultra-thin gate oxide by diffusion after formation of the gate.
公开/授权文献
- USD384192S Bouncing shoe 公开/授权日：1997-09-30
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