发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US343699申请日： 1999-06-30
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公开(公告)号： US6153509A公开(公告)日： 2000-11-28
- 发明人: Kei Watanabe , Yukio Nishiyama , Naruhiko Kaji , Hideshi Miyajima
- 申请人： Kei Watanabe , Yukio Nishiyama , Naruhiko Kaji , Hideshi Miyajima
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX10-201195 19980701
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/38 ; H01L21/322 ; H01L21/44
摘要：
In a method of manufacturing a semiconductor device including a semiconductor element formed on a semiconductor substrate, an SiOF film is formed at least on the top surfaces of metal wirings under condition that an in-chamber pressure is 5 mTorr or lower. The SiOF film can thus be buried into a space between the metal wirings without causing any void and the capacitance between the wirings can be prevented from increasing, while preventing the metal wirings from being damaged and preventing the aspect ratio from increasing.
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