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    Method of manufacturing a semiconductor device
    1.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US6153509A

    公开(公告)日：2000-11-28

    申请号：US343699

    申请日：1999-06-30

    申请人： Kei Watanabe ,  Yukio Nishiyama ,  Naruhiko Kaji ,  Hideshi Miyajima

    发明人： Kei Watanabe ,  Yukio Nishiyama ,  Naruhiko Kaji ,  Hideshi Miyajima

    IPC分类号： H01L21/768 ,  H01L21/38 ,  H01L21/322 ,  H01L21/44

    CPC分类号： H01L21/76837 ,  H01L21/76834 ,  Y10S438/963

    摘要： In a method of manufacturing a semiconductor device including a semiconductor element formed on a semiconductor substrate, an SiOF film is formed at least on the top surfaces of metal wirings under condition that an in-chamber pressure is 5 mTorr or lower. The SiOF film can thus be buried into a space between the metal wirings without causing any void and the capacitance between the wirings can be prevented from increasing, while preventing the metal wirings from being damaged and preventing the aspect ratio from increasing.

    摘要翻译： 在制造半导体元件的半导体器件的制造方法中，在室内压力为5mTorr以下的条件下，至少在金属配线的上表面上形成SiOF膜。 因此，可以将SiOF膜埋入金属配线之间的空间，而不产生任何空隙，并且可以防止布线之间的电容增加，同时防止金属布线被损坏并防止纵横比增加。

    Semiconductor device and manufacturing method thereof
    6.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    具有氟掺杂氧化硅的半导体器件

    公开(公告)号：US06646351B2

    公开(公告)日：2003-11-11

    申请号：US10201892

    申请日：2002-07-25

    申请人： Kei Watanabe ,  Yukio Nishiyama

    发明人： Kei Watanabe ,  Yukio Nishiyama

    IPC分类号： H01L2348

    CPC分类号： H01L21/76832 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31629 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834

    摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating layer formed above the semiconductor substrate, a first metal interconnection embedded in the interlayer insulating layer with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer, a diffusion preventive layer formed on at least the first metal interconnection to prevent diffusion of a metal included in the first metal interconnection, a nitrogen-doped silicon oxide layer formed on the diffusion preventive layer, a fluorine-doped silicon oxide layer formed on the nitrogen-doped silicon oxide layer, and a second metal interconnection embedded in the fluorine-doped silicon oxide layer with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer, and electrically connected to the first metal interconnection.

    摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的层间绝缘层，嵌入在层间绝缘层中的第一金属互连，其表面暴露于与层间绝缘层的表面相同的平面;扩散防止层 形成在至少第一金属互连上以防止第一金属互连中包括的金属的扩散，形成在扩散防止层上的氮掺杂氧化硅层，形成在氮掺杂氧化硅上的氟掺杂氧化硅层 层，以及埋在氟掺杂氧化硅层中的第二金属互连，其表面暴露于与氟掺杂氧化硅层的表面相同的平面，并且电连接到第一金属互连。

    Semiconductor device and manufacturing method thereof
    7.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US06951807B2

    公开(公告)日：2005-10-04

    申请号：US10668277

    申请日：2003-09-24

    申请人： Kei Watanabe ,  Yukio Nishiyama

    发明人： Kei Watanabe ,  Yukio Nishiyama

    IPC分类号： H01L21/3205 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

    CPC分类号： H01L21/76832 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31629 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834

    摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating layer formed above the semiconductor substrate, a first metal interconnection embedded in the interlayer insulating layer with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer, a diffusion preventive layer formed on at least the first metal interconnection to prevent diffusion of a metal included in the first metal interconnection, a nitrogen-doped silicon oxide layer formed on the diffusion preventive layer, a fluorine-doped silicon oxide layer formed on the nitrogen-doped silicon oxide layer, and a second metal interconnection embedded in the fluorine-doped silicon oxide layer with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer, and electrically connected to the first metal interconnection.

    摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的层间绝缘层，嵌入在层间绝缘层中的第一金属互连，其表面暴露于与层间绝缘层的表面相同的平面;扩散防止层 形成在至少第一金属互连上以防止第一金属互连中包括的金属的扩散，形成在扩散防止层上的氮掺杂氧化硅层，形成在氮掺杂氧化硅上的氟掺杂氧化硅层 层，以及埋在氟掺杂氧化硅层中的第二金属互连，其表面暴露于与氟掺杂氧化硅层的表面相同的平面，并且电连接到第一金属互连。

    Composite valve for reciprocating engines and method for manufacturing the same
    9.
    发明授权
    Composite valve for reciprocating engines and method for manufacturing the same 失效
    用于往复式发动机的复合阀及其制造方法

    公开(公告)号：US4834036A

    公开(公告)日：1989-05-30

    申请号：US203494

    申请日：1988-06-07

    申请人： Yukio Nishiyama ,  Junzo Fujioka ,  Haruki Hino ,  Takuya Miyashita

    发明人： Yukio Nishiyama ,  Junzo Fujioka ,  Haruki Hino ,  Takuya Miyashita

    IPC分类号： B23P15/00 ,  F01L3/02

    CPC分类号： F01L3/02 ,  B23P15/002

    摘要： A composite follow valve for internal combustion engines such as an intake and an exhaust valve and the method for producing the same are disclosed. The valve is produced by integrating into the whole a valve head portion molded from a lightweight, heat-resistant material selected from a group of titanium alloys and titanium-aluminium alloys, a stem portion molded from a high-strength alloy steel, made hollow inside to reduce weight, and a stem end portion molded from a hard material selected from a group of martensitic stainless steel, silicon nitride and silicon carbide ceramics. Since the different materials of the separate valve components are selected to meet the requirements of their particular functions and operating condition under which they are placed. Also, because of this separate arrangement, the valve can be produced at a relatively reduced cost, since the use of expensive materials is saved. Furthermore, the valve is molded, not in a whole body, but in separate components, there is no use for expensive isothermal forging machines as in the case of prior art production methods.

    Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program
    10.
    发明授权
    Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program 有权
    形成绝缘膜的方法，制造半导体器件的方法及其控制计算机程序

    公开(公告)号：US07446061B2

    公开(公告)日：2008-11-04

    申请号：US11633484

    申请日：2006-12-05

    申请人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

    发明人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

    IPC分类号： H01L21/44 ,  H01L21/31

    CPC分类号： H01L21/31612 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

    摘要： A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.

    摘要翻译： 将具有凹槽的半导体衬底放置在等离子体产生反应室中。 硅，氧和含氢气体作为工艺气体被引入到反应室中。 含硅气体以外的含氢气体的气体流量与含硅气体和含氧气体的总气体流量的比率定义为第一气体流量比。 含氧气体的气体流量与含硅气体的气体流量的比定义第二气体流量比。 第一和第二气体流量比建立了关键条件的线性函数。 通过相对增加第一气体流量比来建立簇形成条件，同时相对于临界条件相对降低第二气体流量比。 通过相对地降低第一气体流量比同时相对于临界条件相对增加第二气体流量比也建立了集束抑制条件。 处理气体在簇形成条件下并在簇抑制条件下交替地供给到反应室，以形成埋在槽中的绝缘膜。