发明授权
- 专利标题: CMOS semiconductor device
- 专利标题(中): CMOS半导体器件
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申请号: US70915申请日: 1998-05-04
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公开(公告)号: US6153915A公开(公告)日: 2000-11-28
- 发明人: Fumitoshi Yamamoto , Tomohide Terashima
- 申请人: Fumitoshi Yamamoto , Tomohide Terashima
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-276685 19931105
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/8238 ; H01L21/8249 ; H01L27/06 ; H01L27/088 ; H01L27/092 ; H01L29/10 ; H01L29/41 ; H01L29/78 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113
摘要:
In a semiconductor device and a method of manufacturing the same according to the invention, a p-type diffusion region for electrically connecting a back gate region and an electrode layer together is formed at a source region. Thereby, both of source region and p-type diffusion region are electrically connected to the electrode layer, so that the source region and the back gate region are maintained at the same potential. As a result, it is possible to provide the semiconductor device and the method of manufacturing the same which can suppress operation of a parasitic bipolar transistor formed in the semiconductor device even if a gate electrode has a large width.
公开/授权文献
- US4735160A Cutting device for a sewing machine 公开/授权日:1988-04-05