发明授权
- 专利标题： Photo-mask and method of fabricating the same
- 专利标题（中）： 光掩模及其制造方法
-
申请号： US10136申请日： 1998-01-21
-
公开(公告)号： US6156460A公开(公告)日： 2000-12-05
- 发明人: Chao-Yuan Huang
- 申请人： Chao-Yuan Huang
- 申请人地址： TWX
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX
- 优先权： TWX86118025 19971201
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; H01L21/768 ; G03F9/00
摘要：
A photo-mask and a method of fabricating the same. A photo-mask comprises a quartz glass substrate, on which a clear area, a grey area, and a dark area formed over the quartz glass substrate. Incident light penetrates through the clear area completely, but only part of the incident light will go through the grey area since the other part of the incident light is absorbed by the grey area, On the other hand, incident light is blocked by the dark area completely.
公开/授权文献
- US5425021A Packet switching resource management within nodes 公开/授权日：1995-06-13
信息查询
