发明授权
US6156672A Method of forming dielectric thin film pattern and method of forming
laminate pattern comprising dielectric thin film and conductive thin
film
失效
形成电介质薄膜图案的方法和形成包括电介质薄膜和导电薄膜的叠层图案的方法
- 专利标题： Method of forming dielectric thin film pattern and method of forming laminate pattern comprising dielectric thin film and conductive thin film
- 专利标题（中）： 形成电介质薄膜图案的方法和形成包括电介质薄膜和导电薄膜的叠层图案的方法
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申请号： US443671申请日： 1999-11-19
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公开(公告)号： US6156672A公开(公告)日： 2000-12-05
- 发明人: Yoshihiro Koshido , Kei Fujibayashi , Yuji Toyota , Tadayuki Okawa , Ryoichiro Takahashi
- 申请人： Yoshihiro Koshido , Kei Fujibayashi , Yuji Toyota , Tadayuki Okawa , Ryoichiro Takahashi
- 申请人地址： JPX
- 专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX10-337868 19981127
- 主分类号： H05K3/46
- IPC分类号： H05K3/46 ; H01L21/02 ; H01L21/027 ; H01L21/302 ; H01L21/3065 ; H01L21/316 ; H01P3/16 ; H05K1/02 ; H05K3/04 ; H01L21/31
摘要：
A method of forming a dielectric thin film pattern, comprises the steps of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein as a material for the dielectric thin film, at least one of CeO.sub.2, Sm.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Y.sub.2 O.sub.3, TiO.sub.2, Al.sub.2 O.sub.3, and MgO is used; and removing the resist pattern whereby the dielectric thin film is patterned.
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