发明授权
US6157207A Protection of logic modules in a field programmable gate array during antifuse programming 失效
在反熔丝编程期间保护现场可编程门阵列中的逻辑模块

Protection of logic modules in a field programmable gate array during
antifuse programming
摘要:
To protect logic module output devices from high voltages, logic modules are not powered during antifuse programming. In some embodiments, two separate power input terminals VCC1 and VCC2 are provided: power input terminal VCC1 being coupled to power the logic modules, and power input terminal VCC2 being coupled to power the programming control circuitry. Power terminal VCC1 is left floating or is grounded during antifuse programming such that the logic modules are not powered but such that the programming circuitry is powered during antifuse programming via the second power terminal VCC2. Logic module output protection transistors are not required nor is the associated charge pump. Because the logic module input devices are not powered, a current surge through the input devices on power up does not occur and an internal disable signal and associated circuitry is not required. In one embodiment, the field programmable gate array is made smaller because it has no internal disable signal and associated circuitry, no logic module output protection transistors, and no charge pump that operates during normal circuit operation. In embodiments, power input terminal VCC2 is a high voltage compatible power input terminal.
公开/授权文献
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理;集成电路器件或其特殊部件的制造(由预制电组件组成的组装件的制造入H05K3/00,H05K13/00)
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理(电可编程只读存储器或其多步骤的制造方法入H01L27/115)
H01L21/78 ...把衬底连续地分成多个独立的器件(改变表面物理特性或者半导体形状的切割入H01L21/304)
H01L21/82 ....制造器件,例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的(H01L21/8258优先)
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
0/0