发明授权
US6160621A Method and apparatus for in-situ monitoring of plasma etch and
deposition processes using a pulsed broadband light source
有权
用于使用脉冲宽带光源原位监测等离子体蚀刻和沉积工艺的方法和装置
- 专利标题： Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
- 专利标题（中）： 用于使用脉冲宽带光源原位监测等离子体蚀刻和沉积工艺的方法和装置
-
申请号： US409842申请日： 1999-09-30
-
公开(公告)号： US6160621A公开(公告)日： 2000-12-12
- 发明人: Andrew Perry , Randall Mundt
- 申请人： Andrew Perry , Randall Mundt
- 申请人地址： CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： CA Fremont
- 主分类号： C23C14/54
- IPC分类号： C23C14/54 ; C23C16/52 ; G01B11/06 ; H01L21/205 ; H01L21/3065
摘要：
An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.
公开/授权文献
信息查询
IPC分类:
