发明授权
- 专利标题： Method for forming a fuse in integrated circuit application
- 专利标题（中）： 集成电路应用中形成保险丝的方法
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申请号： US156362申请日： 1998-09-18
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公开(公告)号： US6162686A公开(公告)日： 2000-12-19
- 发明人: Kuo Ching Huang , Tse-Liang Ying , Yu-Hua Lee , Ming-Hsin Li
- 申请人： Kuo Ching Huang , Tse-Liang Ying , Yu-Hua Lee , Ming-Hsin Li
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L23/525
- IPC分类号： H01L23/525 ; H01L21/336 ; H01L21/00 ; H01L21/331 ; H01L21/44 ; H01L21/82
摘要：
A method of forming a grooved fuse (plug fuse) in the same step that via plugs are formed in the guard ring area 14 and in product device areas. A key point of the invention is to form fuses from the via plug layer, not from the metal layers. Also, key guard rings are formed around the plug guise. The invention can include the following: a semiconductor structure is provided having a fuse area, a guard ring area surrounding the fuse area; and a device area. First and second conductive strips are formed. First and second insulating layers are formed over the first and second conductive strips. Plug contacts and fuse plugs are formed through the first and second insulating layers to the first and second conductive strips. A third insulating layer is formed over the second insulating layer. Metal lines are formed over the third insulating layer in the device area. A fuse via opening is formed in the third insulating layer. A plug fuse is formed in the fuse via opening. A fourth insulating layer is formed over the plug fuse and the third insulating layer. A fuse opening is formed at least partially though the fourth insulating layer over the fuse area.
公开/授权文献
- US5460339A Locking winding shaft 公开/授权日：1995-10-24