发明授权
- 专利标题： Method for growing single crystal
- 专利标题（中）： 生长单晶的方法
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申请号： US263586申请日： 1999-03-05
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公开(公告)号： US6165263A公开(公告)日： 2000-12-26
- 发明人: Takenori Sekijima , Takashi Fujii , Kikuo Wakino , Masakatsu Okada
- 申请人： Takenori Sekijima , Takashi Fujii , Kikuo Wakino , Masakatsu Okada
- 申请人地址： JPX
- 专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX10-098521 19980325
- 主分类号： H01F41/14
- IPC分类号： H01F41/14 ; C30B13/00 ; C30B13/24 ; C30B13/28 ; C30B29/28 ; C30B15/22
摘要：
A method for growing a single crystal by allowing a seed crystal to contact a molten zone formed by melting a polycrystalline material, followed by moving the molten zone away from the seed, wherein the oxygen concentration in the atmosphere during growth of the single crystal is lower than about 10% by volume.
公开/授权文献
- US5600088A Coatings for solid propellants 公开/授权日：1997-02-04
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