发明授权
- 专利标题: Method of fabricating semiconductor laser using selective growth
- 专利标题(中): 使用选择性增长制造半导体激光器的方法
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申请号: US09157246申请日: 1998-09-18
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公开(公告)号: US06171878B2公开(公告)日: 2001-01-09
- 发明人: Tsuyoshi Fujimoto , Yumi Naito , Atsushi Okubo , Yoshikazu Yamada
- 申请人: Tsuyoshi Fujimoto , Yumi Naito , Atsushi Okubo , Yoshikazu Yamada
- 优先权: JP9-253884 19970918
- 主分类号: H01S302
- IPC分类号: H01S302
摘要:
In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth. In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers.
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